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Manufacturer Part Number: GT10J312(Q)
Our Part Number:

LYN-GT10J312(Q)

Product Category: IGBT Transistors
Manufacturer / Brand: Toshiba Semiconductor and Storage
Brief Description: IGBT 600V 10A 60W TO220SM
Datasheet Download: GT10J312(Q) pdf datasheetGT10J312(Q).pdf
Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity Available: 85990 Pieces
Unit Price: Quote by Email: sales@lyn-team.com
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
Delivery Time: 1-2 Days
Date Code (D/C): New
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Manufacturer Part Number : GT10J312(Q)
Our Part Number : LYN-GT10J312(Q)
Manufacturer : Toshiba Semiconductor and Storage
Description : IGBT 600V 10A 60W TO220SM
Packaging : Tube
Series : -
Part Status : Obsolete
IGBT Type : -
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 10A
Current - Collector Pulsed (Icm) : 20A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Power - Max : 60W
Switching Energy : -
Input Type : Standard
Gate Charge : -
Td (on/off) @ 25°C : 400ns/400ns
Test Condition : 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) : 200ns
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package : TO-220SM
Other Part Number : GT10J312(Q)-ND
Delivery Time : Ship within 1 day.
Manufacturer Production time : 6-8 weeks
Weight : 0.3064 KG
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